Design of 0.35 μm SiGe LNAs for UWB communications systems

Simple low-noise, low-power, and gain-controlled 0.35 μm SiGe UWB amplifiers for 3.1-10.6 GHz radios are presented. Simulation results of common-base BiCMOS LNAs give a gain controlled from 3.8 up to 15.5 dB over a bandwidth range from 10.6 down to 3.1 GHz, respectively. These LNAs achieved a noise figure that is less than 5.5 dB and power dissipation less than 6.6 mW under a power supply of ±1.5 V. Also, a common-gate CMOS LNA is designed to operate over all the frequency range 3.1-10.6 GHz with a 10.2 dB gain, which is flat to within ±0.3 dB, a noise figure of 5.1 dB, power dissipation of 5.6 mW, and a 1-dB compression point of about -23 dBm in a 50 Ω-input system. The results stand high when compared to recent published figures.