Scaling beyond conventional CMOS device

Author

Ieong, Meikei ; Dons, B. ; Kedzierski, Jakub ; Ren, Zhibin ; Rim, Ken ; Yang, Min ; Shang, Huiling

Author_Institution

IBM Semicond. R&D Center, T.J. Watson Res. Center, Yorktown Height, NY, USA

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

31

Abstract

Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, we discuss device scaling options beyond convention device structures. We discuss ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic. We also discuss various mobility enhancement techniques including strained silicon on insulator (SGOI), strained silicon directly on insulator (SSDOI), and hybrid orientation technology (HOT).

Keywords

CMOS integrated circuits; MOSFET; silicon-on-insulator; CMOS device; FinFET; MOSFET; device performance trend; device scaling; device structures; hybrid orientation technology; improved electrostatic; mobility enhancement techniques; strained silicon directly on insulator; strained silicon on insulator; ultrathin body silicon on insulator; CMOS technology; Doping; Electrostatics; Energy management; FinFETs; Integrated circuit technology; MOSFET circuits; Research and development; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1434948

Filename

1434948