Title :
Effect of nitrogen on the off-state drain leakage current
Author :
Huang, Jiyi ; Chen, T.P. ; Tse, M.S. ; Ang, C.H. ; Manju, S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this work, a simple approach is applied to a quantitative study of the influence of the oxide charge trapping over the drain extension due to electrical stress on the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain leakage current if the edges direct tunneling (EDT) is dominant in the drain current. For nitrided gate oxide, with the increase of the nitrogen concentration the increase of the off-state drain leakage current becomes more significant due to the nitrogen-enhanced oxide charge trapping.
Keywords :
MOSFET; electron traps; leakage currents; drain extension; edges direct tunneling; electrical stress; nitrided gate oxide; nitrogen-enhanced oxide charge trapping; off-state drain leakage current; Circuits; Dielectrics; Electron traps; Leakage current; MOSFETs; Nitrogen; Semiconductor device manufacture; Stress measurement; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1434957