Title :
Measurement of source coupled logic "exclusive OR" circuit ring oscillator of SOI Si vertical dual carrier field effect transistor with effective channel length of 5-30nm
Author :
Tang, Z.M. ; Li, G.H. ; Yang, R. ; Xu, Y.Z. ; Yang, Y.H. ; Huang, D.H. ; Xu, P. ; Shen, S.G. ; Lin, C.L. ; Yan, F.Z. ; Han, D.J. ; Tien, X.N. ; Ji, Y.Z. ; Du, D.S. ; Huang, C.
Author_Institution :
Inst. of Comput. Technol., CAS, Beijing, China
Abstract :
Source coupled logic (SCL) flip flops of SOI Si "vertical dual carrier field effect transistor" (VDCFET) with effective channel length of 5-30nm have been designed, fabricated and measured. These development works are presented in three accompanied papers submitted to this conference. Presented in this paper are the measured circuit performance of source coupled logic (SCL) CPU switching circuits of SOI Si VDCFET with effective channel length of 5-30 nm, including ring oscillators and "exclusive OR" circuits.
Keywords :
field effect transistors; flip-flops; oscillators; silicon-on-insulator; switching circuits; 5 to 30 nm; CPU switching circuits; SOI; VDCFET; circuit performance; effective channel length; exclusive or circuit; flip flops; ring oscillator; source coupled logic; vertical dual carrier field effect transistor; Central Processing Unit; Circuit optimization; Coupling circuits; FETs; Length measurement; Logic circuits; Resistors; Ring oscillators; System-on-a-chip; Voltage-controlled oscillators;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1434958
