Title :
Investigation of gate oxide quality in novel nanometer vertical MOSFETs by fillet local oxidation
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
Abstract :
Structure for a vertical MOSFET (metal oxide semiconductor field effect transistor) is one of the solutions for fabricating the under 50nm channel length transistor. Compared with conventional devices, new features include vertical channel structure, dielectric pocket, FILOX (fillet local oxidation) oxide layer and PolySiGe region. This vertical MOSFET work is put into the ITRS (International Technology Roadmap of Semiconductor) roadmap. We wish to realize the 22nm surround gate MOSFETs technology in 2009.
Keywords :
MOSFET; nanotechnology; oxidation; FILOX; ITRS; PolySiGe; dielectric pocket; fillet local oxidation; gate oxide quality; metal oxide semiconductor field effect transistor; nanometer vertical MOSFET; vertical channel structure; Dielectric devices; Electrodes; MOSFETs; Oxidation; Parasitic capacitance; Size measurement; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1434965
