Process and characteristic of vertical multi-gate MOSFETs with graded channel doping

In the paper, a vertical multi-gate MOSFET with graded channel doping, fabricated by the process compatible with CMOS process, is presented. The special features and key steps of the process are introduced in detail. The device fabricated by the process is investigated. And the characteristics of high driven current, strong ability to restrain the short-channel and hot-carrier effect are observed in the devices, which are better than those of the uniform doping devices. Furthermore different device performances, including the output current, break-down voltage, are found in the device due to the asymmetry of the drain and source of the device. Afterwards the reasons are analyzed completely. Such devices are promising to be used in low-leakage, low-power application such as DRAM, laptop computer, and wireless devices.