Title :
On the importance of gate shot noise in deep submicron RF NMOSFETs induced by gate oxide breakdown
Author :
Wang, H. ; Zeng, R. ; Li, X.P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The effect of gate oxide breakdown on the microwave noise performance of NMOSFETs is investigated. A serous degradation of microwave noise parameters induced by oxide breakdown has been observed. The degradation of the typical noise parameters in a 0.18 μm NMOSFET such as noise figure, equivalent noise resistance are characterized in the frequency range of 2 to 14 GHz. Possible degradation mechanisms are investigated by the parameter extraction using a noise equivalent circuit model.
Keywords :
MOSFET; electric breakdown; equivalent circuits; microwave field effect transistors; shot noise; 0.18 micron; 2 to 14 GHz; deep submicron RF NMOSFET; degradation mechanisms; equivalent circuit model; equivalent noise resistance; gate oxide breakdown; gate shot noise; microwave noise performance; noise figure; parameter extraction; Circuit noise; Degradation; Electric breakdown; Frequency measurement; MOSFETs; Noise figure; Parameter extraction; Radio frequency; Semiconductor device noise; Stress;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1434978
