Fabrication and integration of high performance mixed signal and RF passive components in 0.13μm Cu BEOL technologies

Author

Chen, Z. ; Lin, K.M. ; Kuo, C.C. ; Ko, T.C. ; Huang, J.C. ; Wang, J.P. ; Lin, Y.F. ; Wu, T.W. ; Su, T.C. ; Liao, C.C. ; Jeng, M.C.

Author_Institution

Center of Logic Technol. Dev. & Manuf., Semicond. Manuf. Int. Corp., Shanghai, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

175

Abstract

High-performance passive components are keys to reach system-on-a-chip (SOC) solution of mixed-signal and radio frequency (RF) circuit design. This paper presents the fabrication and integration of high performance mixed-signal and RF passive components using industrial standard 0.13μm Cu BEOL technologies. On-chip inductor with 6μm ultra-thick top metal is reported firstly. A 1.85-nH inductor achieved a peak quality factor (Q) of 27. Followed by high-performance/low-cost 1.5fF/μm² metal-insulator-metal (MTM) capacitors which increases capacitance density by 50% comparing to current industrial standard. Finally, high resistivity poly (HRP) resistors are shown. Deep n-well (DNW) is also part of the process in this study.

Keywords

MIM devices; mixed analogue-digital integrated circuits; passive networks; radiofrequency integrated circuits; system-on-chip; 13 micron; 6 micron; Cu; Cu BEOL technologies; RF passive components; capacitance density; deep n-well process; high performance mixed signal; high resistivity poly resistors; metal-insulator-metal capacitors; mixed-signal circuit; on-chip inductor; radio frequency circuit; system-on-a-chip; ultra-thick top metal; Circuit synthesis; Fabrication; Inductors; MIM capacitors; Metal-insulator structures; Q factor; RF signals; Radio frequency; System-on-a-chip; Textile industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1434980

Filename

1434980