DocumentCode
435718
Title
A novel silicon-based CBCPW-fed CBCPS ring resonator
Author
Ma, Kaixue ; Ma, Jianguo ; Do, Manh Anh ; Yeo, Kiat Seng ; Sun, Jianbo ; Miao, Jianmin
Author_Institution
Center for Integrated Circuits & Syst., Nanyang Technol. Univ., Singapore, Singapore
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
179
Abstract
A silicon-based uni-planar CBCPW-fed CBCPS ring resonator is introduced for the first time. The simulated Q-factor of CBCPS ring is higher than that of the microstrip line (MSL) ring and a weak parasite resonant phenomenon is existed in spectrum response of the CBCPS ring resonator due to the crosstalk of the PP (parallel plate) modes. The micromachined fabrication process is employed to fabricate the designed planar resonator. The measured unloading Q-factors of the CBCPS ring resonator are 53.5 at 10.62GHz, 45 at the second resonant frequency 20.93GHz.
Keywords
coplanar waveguides; elemental semiconductors; micromechanical devices; microstrip resonators; 10.62 GHz; 20.93 GHz; CBCPS ring resonator; CBCPW-fed ring resonator; Q-factor; Si; micromachined fabrication process; parasite resonant phenomenon; planar resonator; silicon-based ring resonator; spectrum response; Conductors; Coplanar waveguides; Dielectric losses; Dielectric substrates; Fabrication; Integrated circuit technology; Optical ring resonators; Planar transmission lines; Q factor; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1434981
Filename
1434981
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