DocumentCode
435719
Title
SOI active and passive integrated devices for RFIC applications
Author
Yang, Rong ; Li, Junfeng ; Qian, He ; Han, Zhengsheng
Author_Institution
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
186
Abstract
The structures of SOI active and passive integrated devices for RFIC applications are proposed, as well as the simplified processes. SOI RF LDMOS´s, NMOS´s inductors, capacitors, resistors and varactors have been integrated in the same SIMOX substrate successfully in the first experiment and key devices, including LDMOS´s, NMOS´s and inductors, show excellent or acceptable performance. The proposed integrated structures and processes are potentially feasible for multi-Gigahertz RFIC applications.
Keywords
MOS integrated circuits; SIMOX; radiofrequency integrated circuits; NMOS capacitors; NMOS inductors; NMOS resistors; NMOS varactors; RF LDMOS; RFIC applications; SIMOX substrate; SOI; active integrated devices; passive integrated devices; Costs; Dielectric substrates; Inductors; MIM capacitors; MOS devices; Parasitic capacitance; Radio frequency; Radiofrequency integrated circuits; Resistors; Tiles;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1434983
Filename
1434983
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