Title :
Fabrication and characterization of 1.5fF/μm2 high-performance low-cost metal-insulator-metal capacitor in 0.13μm and below Cu BEOL technologies
Author :
Chen, Z. ; Lin, K.M. ; Kuo, C.C. ; Lin, Y.F. ; Huang, J.C. ; Su, T.C. ; Wang, J.P. ; Liao, C.C. ; Han, Q.H. ; Bei, D.H. ; Ang, T.C. ; Jeng, M.C.
Author_Institution :
Center of Logic Technol. Dev. & Manuf., Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
The capacitance density of industrial low-cost metal-insulator-metal (MIM) capacitor in Cu back-end-of-line (BEOL) technologies has been improved to 1.5 fF/μm2 which is 50% higher than the current foundry standard of 1.5 fF/μm2 based in J. C. Guo et al. (2003), P. Zurcher et al. (2002) and C. H. Ng et al. (2002). In this paper, we present a method to fabricate the high-density MIM with only one additional mask required on lop of the standard logic baseline Cu BEOL technologies. This MIM capacitor´s reliability, voltage and temperature coefficients, thermal stability, and mismatching performance have been proved to be fully qualified to meet foundry´s requirements. Without applying novel material nor using extra offsetting process loop, the proposed MIM capacitor has a very good performance-over-cost ratio, which is promising to be implemented in 0.13μm and below Cu BEOL technologies.
Keywords :
MIM devices; capacitors; copper; 0.13 micron; Cu BEOL technologies; capacitance density; capacitor reliability; foundry requirements; high-density MIM; high-performance metal-insulator-metal capacitor; low-cost metal-insulator-metal capacitor; mismatching performance; temperature coefficients; thermal stability; voltage coefficient; Capacitance; Fabrication; Foundries; Logic; MIM capacitors; Metal-insulator structures; Metals industry; Temperature; Thermal stability; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1434987
