DocumentCode
435723
Title
Design of radio frequency metal-insulator-metal (MIM) capacitors
Author
Goh, Magdalene W C ; Lim, Queennie ; Keating, Richard A. ; Kordesch, Albert V. ; Yusof, Yusman Bin Mohd
Author_Institution
Silterra Malaysia Sdn. Bhd., Kedah, Malaysia
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
209
Abstract
RF components such as inductors and capacitors are now common on deep submicron CMOS circuits because of their low cost and reasonable performance. The performance however depends on the design of those components. In this paper, we propose guidelines for improving the high frequency capacitance and quality factor, Q, of integrated capacitors. We present measured data showing how the quality factor is improved when the number of vias is increased.
Keywords
MIM devices; Q-factor; capacitors; integrated circuit design; radiofrequency integrated circuits; deep submicron CMOS circuits; design guidelines; high frequency capacitance; integrated capacitors; quality factor; radio frequency metal-insulator-metal capacitors; Circuits; Computational Intelligence Society; Costs; Inductors; MIM capacitors; Metal-insulator structures; Parasitic capacitance; Q factor; Radio frequency; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1434989
Filename
1434989
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