DocumentCode :
435723
Title :
Design of radio frequency metal-insulator-metal (MIM) capacitors
Author :
Goh, Magdalene W C ; Lim, Queennie ; Keating, Richard A. ; Kordesch, Albert V. ; Yusof, Yusman Bin Mohd
Author_Institution :
Silterra Malaysia Sdn. Bhd., Kedah, Malaysia
Volume :
1
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
209
Abstract :
RF components such as inductors and capacitors are now common on deep submicron CMOS circuits because of their low cost and reasonable performance. The performance however depends on the design of those components. In this paper, we propose guidelines for improving the high frequency capacitance and quality factor, Q, of integrated capacitors. We present measured data showing how the quality factor is improved when the number of vias is increased.
Keywords :
MIM devices; Q-factor; capacitors; integrated circuit design; radiofrequency integrated circuits; deep submicron CMOS circuits; design guidelines; high frequency capacitance; integrated capacitors; quality factor; radio frequency metal-insulator-metal capacitors; Circuits; Computational Intelligence Society; Costs; Inductors; MIM capacitors; Metal-insulator structures; Parasitic capacitance; Q factor; Radio frequency; Titanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1434989
Filename :
1434989
Link To Document :
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