Title :
Ballistic transistors entrance to nanoscale electronics
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
Abstract :
Nanoscale devices in near future are going to be less than the mean free path of carriers. The ballistic conduction is highly probable in these devices. We have investigated the physics of the ballistic field effect transistors (FETs). The I-V characteristics of the ballistic silicon MOSFET is shown, and the mechanism of device operation was discussed. The performance limit of the MOSFET is discussed by means of the ballistic MOSFET characteristics derived. Performance of the experimental device is compared to the ballistic limit in some fabricated samples. The carbon nanotube FET is introduced as the other example of the ballistic FET. The device was found to be of exceedingly high performance if the ballistic conduction was actually realized.
Keywords :
MOSFET; ballistic transport; carbon nanotubes; field effect transistors; nanoelectronics; silicon; ballistic conduction; ballistic field effect transistors; ballistic limit; ballistic silicon MOSFET; ballistic transistors; carbon nanotube FET; carrier mean free path; device operation; nanoscale devices; nanoscale electronics; Automated highways; Ballistic transport; CNTFETs; FETs; MOSFET circuits; Nanoscale devices; Physics; Silicon; Threshold voltage; Transistors;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1434997
