Title :
Single-crystalline silicon thin-film transistor on glass
Author :
Shi, Xuejie ; Wong, Man ; Henttinen, K. ; Suni, T. ; Suni, I. ; Lau, S.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
Single-crystalline silicon-on-glass (cSOG) has been obtained using an "ion-cutting" based layer-transfer technique. Compared to previous attempts of realizing cSOG, extended silicon etching is not required and bulk silicon, instead of the relatively more expensive silicon-on-insulator donor wafers, can be used. Thin-film transistors based on cSOG have been fabricated and characterized. The stability of cSOG thin-film transistors with or without laser-induced annealing is reported.
Keywords :
glass; laser beam annealing; semiconductor thin films; silicon; silicon-on-insulator; thin film transistors; annealing; bulk silicon; donor wafers; ion-cutting; layer-transfer technique; silicon etching; silicon-on-glass; silicon-on-insulator; single-crystalline silicon transistor; thin film transistor; Amorphous materials; Annealing; Crystallization; Etching; Glass; Laser stability; Semiconductor thin films; Silicon; Thin film transistors; Wafer bonding;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435002
