Experimental investigation of the annealing process for self-aligned DSOI MOSFET

Drain and source on insulator (DSOI) structure is proposed to suppress severe self-heating effect and floating-body effect in SOI devices, which become the main drawbacks of SOI structure. In the self-aligned process to implement DSOI MOSFETs. Oxygen implantation was suspended until polysilicon gates were deposited. The high-temperature annealing process for oxygen implantation might do harm to polysilicon gate. Annealing experiments were done to find a proper annealing condition successfully which would not tamper the polysilicon gate, and the main problems of this process are solved.