Title :
Abnormal off-state leakage current increasing with reduced silicon body thickness in nano-SOI devices
Author :
Wang, Wenping ; Huang, Ru ; Zhang, Guoyan ; Yang, Shengqi ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A novel phenomenon is revealed in this paper, i.e. when the channel doping concentration is heavy, the off-state current doesn´t show the continuous decreasing trend with the decrease of silicon body thickness as most literatures reported. Detailed explanation was presented. Therefore, as far as LOP applications are concerned, in comparison with UTB MOSFET slightly higher channel doping and much thicker silicon body thickness can be considered as a better choice for device design.
Keywords :
MOSFET; leakage currents; nanotechnology; semiconductor devices; semiconductor doping; silicon; silicon-on-insulator; LOP applications; UTB MOSFET; channel doping concentration; device design; nano-SOI devices; off-state leakage current; silicon body thickness; Doping; Electrodes; Electrons; Leakage current; MOSFET circuits; Microelectronics; Nanoscale devices; Power MOSFET; Silicon; Tiles;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435011
