Title :
Characteristics of 25nm MOSFETs with mechanical strain in the channel
Author :
Tao Wiu ; Liu, Xiaoyn ; Du, Gang ; Kang, Jingfeng ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The characteristics of typical 25nm p- and n-channel strained Si MOSFETs with mechanical stress applied in the channel are simulated by a commercial device simulator ISE. The impacts of the direction and magnitude of the stress on the device performances such as drive current and sub-threshold characteristics are investigated.
Keywords :
MOSFET; stress effects; 25 nm; ISE; MOSFET; Si; commercial device simulator; drive current; mechanical strain; mechanical stress; sub-threshold characteristics; Capacitive sensors; Lattices; MOSFETs; Manufacturing processes; Microelectronics; Photonic band gap; Silicides; Tensile stress; Tides; Virtual manufacturing;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435017
