Title :
A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics
Author :
Ding, Shi-Jin ; Hu, H. ; Zhu, Chunxiang ; Kim, S.J. ; Li, M.-F. ; Cho, B.J. ; Chin, A. ; Kwong, D.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Singapore Nat. Univ., Singapore
Abstract :
The HfO2-Al2O laminate MIM capacitor exhibits superior performances to the stack and sandwich counterparts, including the smallest linear voltage coefficient of capacitance (β) and leakage current, the highest breakdown voltage, the longest time-to-breakdown as well as the most stable quadratic voltage coefficient of capacitance (α) and capacitance under CVS due to weak electron trapping. The underlying mechanism is likely attributed to the alternate insertions of Al2O3 into the bulk HfO2, thereby preventing crystallization of HfO2 film.
Keywords :
MIM devices; dielectric materials; thin film capacitors; ALD; CVS; HfO2-Al2O3; MIM capacitors; breakdown voltage; dielectric materials; electron trapping; film crystallization; linear voltage coefficient; stable quadratic voltage coefficient; Breakdown voltage; Capacitance; Dielectric measurements; Dielectric substrates; Hafnium oxide; High-K gate dielectrics; Laminates; Leakage current; MIM capacitors; Stress;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435035
