• DocumentCode
    435760
  • Title

    A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics

  • Author

    Ding, Shi-Jin ; Hu, H. ; Zhu, Chunxiang ; Kim, S.J. ; Li, M.-F. ; Cho, B.J. ; Chin, A. ; Kwong, D.E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Singapore Nat. Univ., Singapore
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    403
  • Abstract
    The HfO2-Al2O laminate MIM capacitor exhibits superior performances to the stack and sandwich counterparts, including the smallest linear voltage coefficient of capacitance (β) and leakage current, the highest breakdown voltage, the longest time-to-breakdown as well as the most stable quadratic voltage coefficient of capacitance (α) and capacitance under CVS due to weak electron trapping. The underlying mechanism is likely attributed to the alternate insertions of Al2O3 into the bulk HfO2, thereby preventing crystallization of HfO2 film.
  • Keywords
    MIM devices; dielectric materials; thin film capacitors; ALD; CVS; HfO2-Al2O3; MIM capacitors; breakdown voltage; dielectric materials; electron trapping; film crystallization; linear voltage coefficient; stable quadratic voltage coefficient; Breakdown voltage; Capacitance; Dielectric measurements; Dielectric substrates; Hafnium oxide; High-K gate dielectrics; Laminates; Leakage current; MIM capacitors; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435035
  • Filename
    1435035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435760