Author :
Mizuno, Bunji ; Sasaki, Yuichiro ; Jin, Cheun-Guo ; Tamura, Hideki ; Okashita, Katsumi ; Ito, Hiroyuki ; Tsutsui, Kazuo ; Iwai, Hiroshi
Author_Institution :
Ultimate Junction Technol. Inc., Osaka, Japan
Abstract :
The author´s group updates plasma doping with using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). PD is a good alternative method for ultra shallow junction formation at 45nm technology node and beyond. The latest annealing method of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used for adequate junction depth with lower resistance.
Keywords :
doping profiles; ellipsometry; helium; incoherent light annealing; laser beam annealing; plasma materials processing; semiconductor junctions; 45 nm; He; flash lamp annealing; junction depth; laser annealing; plasma amorphous technology; plasma doping; spectroscopic ellipsometry; spike RTA; ultra shallow junction formation; Amorphous materials; Annealing; Doping; Helium; Lamps; Plasma applications; Plasma immersion ion implantation; Plasma temperature; Very large scale integration; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435040
