Low energy implantation technology with molecular ion beam

Author

Tanjyo, Masayasu ; Hamamoto, Nariaki ; Umisedo, Sei ; Nagayama, Tsutomu ; Sakai, Shigeki ; Naito, Masao ; Nagai, Nobuo ; Aoyama, Takayuki ; Nara, Yasuo

Author_Institution

Nissin Ion Equip. Co. Ltd., Kyoto, Japan

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

434

Abstract

One of the problems of the low acceleration ion implantation technology for ultra-shallow junction formation of 65nm/45nm node devices is the suppression of the energy contamination and the beam angle dispersion. In order to solve the problem, molecular ion beam (Decaborane ion beam) has been developed. It is shown the molecular beam implantation can suppress the space charge effect and beam angle dispersion is suppressed to 1/10 times less than that of conventional single boron ion beam.

Keywords

ion implantation; semiconductor junctions; semiconductor technology; 45 nm; 65 nm; Decaborane ion beam; beam angle dispersion; energy contamination; low acceleration ion implantation technology; low energy implantation technology; molecular beam implantation; molecular ion beam; single boron ion beam; space charge effect; ultra-shallow junction formation; Acceleration; Contamination; Dispersion; Ion beams; Ion implantation; Molecular beam applications; Molecular beams; Particle beams; Space charge; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435042

Filename

1435042