• DocumentCode
    435768
  • Title

    Texture of silicide films on Si(001): the occurrence of axiotaxy in cubic CoSi2, tetragonal α-FeSi2 and orthorhombic NiSi

  • Author

    Detavernier, C. ; Lavoic, C.

  • Author_Institution
    Dept. of Solid State Phys., Ghent Univ., Belgium
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    445
  • Abstract
    It was found that cubic CoSi2, tetragonal α-FeSi2 and orthorhombic NiSi films formed by the solid state reaction of metal films and single crystal Si(100) substrates are textured. The polycrystalline films consist of grains in which certain crystallographic planes align preferentially with [110]-type planes of Si, leading to an oil-normal fiber-like texture.
  • Keywords
    cobalt compounds; crystal structure; elemental semiconductors; iron compounds; metallic thin films; nickel compounds; silicon; CoSi2; FeSi2; NiSi; Si 110-type plane; axiotaxy occurrence; crystallographic planes; cubic CoSi2 film; metal films; oil-normal fiber-like texture; orthorhombic NiSi film; polycrystalline films; silicide films; single crystal Si(100) substrate; solid state reaction; tetragonal α-FeSi2 film; Crystalline materials; Crystallography; Electrons; Grain size; Semiconductor films; Silicides; Solid state circuits; Substrates; Transistors; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435044
  • Filename
    1435044