Title :
Tuning of silicide Schottky barrier heights by segregation of sulfur atoms
Author :
Zhao, Q.T. ; Rije, E. ; Breuer, U. ; Lenk, S. ; Mantl, S.
Author_Institution :
Inst. of Thin Films & Interfaces Res. Center, Jullich, Germany
Abstract :
NiSi Schottky barrier heights are tuned by sulfur implantation in Si(100) prior to Ni deposition. The Schottky barrier height (SBH) on n-Si(100) decreases with the increasing S dose. The minimum SBH value of 0.07 eV for NiSi on n-Si(100) has been obtained. While the SBH values of NiSi on p-Si(100) increases with S implantation dose. The S implantations have no effects on the thermal stability, sheet resistance and morphology of NiSi layers.
Keywords :
Schottky barriers; elemental semiconductors; ion implantation; nickel compounds; silicon; sulphur; 0.07 eV; Ni deposition; NiSi; NiSi Schottky barrier height; NiSi layer morphology; sheet resistance; silicide Schottky barrier height; sulfur atom segregation; sulfur implantation dose; thermal stability; Conductivity; Fabrication; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicidation; Silicides; Silicon carbide; Surface morphology; Thermal resistance;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435046
