Reactively sputtered vanadium nitride as diffusion barrier for copper interconnect

Author

Qu, Xin-Ping ; Zhou, Mi ; Ru, Guo-Ping ; Li, Bing-Zong

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

520

Abstract

VN thin film was studied as diffusion barrier between copper and Si. The VN film was prepared by reactive ion beam sputtering. X-ray diffraction (XRD), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM) were applied to characterize the thin film properties. The as-deposited VN is amorphous and can be thermal stable up to 800°C annealing. The ultrathin VN shows good diffusion barrier properties for copper.

Keywords

Auger electron spectroscopy; X-ray diffraction; annealing; copper; integrated circuit interconnections; scanning electron microscopy; sputtering; superconducting thin films; thermal stability; vanadium compounds; 800 C; Auger electron spectroscopy; Cu; Si; VN; VN thin film; X-ray diffraction; copper interconnect; diffusion barrier; reactive ion beam sputtering; scanning electron microscopy; thermal stability; thin film properties; ultrathin VN; vanadium nitride; Amorphous materials; Copper; Ion beams; Scanning electron microscopy; Semiconductor films; Semiconductor thin films; Spectroscopy; Sputtering; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435060

Filename

1435060