Lithography for sub<30 nm design rules: materials challenges

Paradigm shifts in resist materials design have kept pace with the demands of SIA roadmap and the needs of new lithographic technologies. Advances in resist materials, coupled with resolution enhancement technology have extended the resolution of optical lithography as the microelectronics officially entered the nanotechnology regime. Fundamental understanding is necessary to extend the limits of chemical amplification, design of resists for immersion lithography and for the realization of very fast and high-resolution resists for extreme ultraviolet (EUV) lithography.