Title :
Lubrication behavior in chemical-mechanical planarization
Author :
Liang, H. ; Xu, G.
Author_Institution :
Dept. of Mech. Eng., Alaska Univ., Fairbanks, AK, USA
Abstract :
Chemical-mechanical planarization (CMP) is a synergistic tribological process. It occurs between a polymeric polishing pad, a wafer, and between which is a chemical slurry containing nanoabrasive particles. CMP functions similar to chemical boundary lubrication of mechanical systems, except that the objective of the CMP is to remove materials in a controlled manner. In this article, evidence is provided to discuss lubrication behavior during CMP.
Keywords :
chemical mechanical polishing; lubrication; chemical boundary lubrication; chemical-mechanical planarization; lubrication behavior; mechanical systems; synergistic tribological process; Chemical processes; Friction; Lubrication; Planarization; Polymers; Rough surfaces; Slurries; Substrates; Surface roughness; Viscosity;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435076
