Title :
Ambipolar field-effect transistors based on fullerene peapods
Author :
Guo, Ao ; Fu, Yunyi ; Guan, Lunhui ; Wang, Xiaofeng ; Shi, Zujin ; Gu, Zhennan ; Zhang, Xing
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing, China
Abstract :
The electrical transport properties of C70 and C60 fullerene peapods are investigated. We report the fabrications and performances of field-effect transistors (FETs) based on C70 and C60 fullerene peapods. Most of the fullerene peapod-FETs exhibit ambipolar characteristics at room temperature in air. The origin of ambipolar behavior is also qualitatively discussed. The ambipolar FETs based on fullerene peapods exhibit hysteresis effect in their electrical characteristics.
Keywords :
carbon; electrical conductivity; field effect transistors; fullerene compounds; fullerene devices; hysteresis; C60; C60 fullerene peapods; C70; C70 fullerene peapods; ambipolar field-effect transistors; electrical characteristics; electrical transport properties; fullerene peapod-FET; hysteresis; Annealing; Argon; Contact resistance; Electrodes; FETs; Gold; Hysteresis; Microelectronics; Temperature; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435087
