• DocumentCode
    435801
  • Title

    Ambipolar field-effect transistors based on fullerene peapods

  • Author

    Guo, Ao ; Fu, Yunyi ; Guan, Lunhui ; Wang, Xiaofeng ; Shi, Zujin ; Gu, Zhennan ; Zhang, Xing

  • Author_Institution
    Dept. of Microelectron., Peking Univ., Beijing, China
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    644
  • Abstract
    The electrical transport properties of C70 and C60 fullerene peapods are investigated. We report the fabrications and performances of field-effect transistors (FETs) based on C70 and C60 fullerene peapods. Most of the fullerene peapod-FETs exhibit ambipolar characteristics at room temperature in air. The origin of ambipolar behavior is also qualitatively discussed. The ambipolar FETs based on fullerene peapods exhibit hysteresis effect in their electrical characteristics.
  • Keywords
    carbon; electrical conductivity; field effect transistors; fullerene compounds; fullerene devices; hysteresis; C60; C60 fullerene peapods; C70; C70 fullerene peapods; ambipolar field-effect transistors; electrical characteristics; electrical transport properties; fullerene peapod-FET; hysteresis; Annealing; Argon; Contact resistance; Electrodes; FETs; Gold; Hysteresis; Microelectronics; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435087
  • Filename
    1435087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435801