Title :
Challenges of DRAM and flash scaling - potentials in advanced emerging memory devices
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
Abstract :
Dynamic random access memory (DRAM) and Flash nonvolatile memory (NVM) continue lo be scaled down to sub-90nm dimensions, a trend expected to extend through the next few generations. Difficulties, however, arise in both device and process technology for sub-65nm geometries in both types of memory. This paper analyzes these challenges and presents emerging device candidates with their potentials for high volume realization and opportunities for research and development in this area.
Keywords :
DRAM chips; flash memories; nanotechnology; DRAM; Flash nonvolatile memory; dynamic random access memory; flash scaling-potentials; high-k dielectrics; memory devices; nanocrystal; process technology; Ambient intelligence; Capacitors; EPROM; Geometry; High K dielectric materials; Nonvolatile memory; Random access memory; Read only memory; Scanning electron microscopy; Switches;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435093
