DocumentCode
435811
Title
Optimal ramped-gate soft programming of over-erased flash EEPROM cells at given current
Author
Quan, Wu-Yun ; Baek, Chang-Ki ; Kim, Dae M. ; Gang, Ruan ; Huang, Yiping
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
703
Abstract
Presented herein is an efficient simulation technique enabling systematic investigation of the soft programming over-erased flash EEPROM cells. The simulation provides a method by which to find the optimal soft programming technique for given current. The method requires only the cell performance data and allows investigation of the soft programming under various bias conditions. In principle, the methodology can also be used to investigate the programming and erase operations.
Keywords
flash memories; cell operation; cell performance data; optimal ramped-gate soft programming; over-erased flash EEPROM cells; programming operation; simulation technique; Boosting; Charge pumps; Computational modeling; Computer science; EPROM; Microelectronics; Performance evaluation; Testing; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435100
Filename
1435100
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