• DocumentCode
    435819
  • Title

    Study on Pb(Zr, Ti)O3 capacitors for ferroelectric random access memory

  • Author

    Ze, Jia ; Jiachuan, Zhang ; Dan, Xie ; Zhigang, Zhang ; Tianling, Ren ; Litian, Liu

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    735
  • Abstract
    The PZT film capacitors for PeRAM need have ideal properties, such as low coercive voltage and high remanent polarization. The two types of PZT film prepared by sol-gel method with different ratio of Zr/Ti, such as 30/70 and 40/60, have difference and similarity on properties. The properties of ferroelectric capacitor are also related to the cell capacitor area due to the influence from the latter process and the conditions for testing. The properties of the PZT film with different amount of layers are discussed and compared.
  • Keywords
    ferroelectric capacitors; ferroelectric storage; lead compounds; random-access storage; sol-gel processing; titanium compounds; zirconium compounds; PZT; PZT film capacitors; PbZrO3TiO3; PeRAM; ferroelectric capacitor; ferroelectric random access memory; high remanent polarization; low coercive voltage; sol-gel method; Capacitors; Ferroelectric films; Ferroelectric materials; Hysteresis; Linearity; Polarization; Random access memory; Testing; Voltage; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435108
  • Filename
    1435108
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435819