Effects of integration processes on the ferroelectric performance of SrBi2Ta2O9 capacitors

The ferroelectric properties of integrated Pt/SrBi₂Ta₂O₉/Pt capacitors by insulator layer deposition and contact photo etching were investigated. Integration processes, especially the introduced ions and electrons play an important role for the degradation of SBT capacitors. After insulator layer deposition and contact photo etching, a significant reduction in polarization was observed, and this reduction can be recovered well by recovery annealing in oxygen. The experimental result demonstrates that the integration processes can produce the ions, electrons and other defects, which has an obvious effect on the polarization of SBT capacitors. Also, the introduced defects can affect the leakage current and retention behavior.