Title :
Nano-structured multi-layer SiGe alloy grown by ultra high vacuum chemical vapor deposition
Author :
Ye, Zhizhen ; Wu, Guibin ; Huang, Jingyun ; Cui, Jifeng ; Sun, Weifeng ; Liu, Guojun ; Zhao, Binghui
Author_Institution :
Zhejiang Univ., State Key Lab. of Silicon Materials, Hangzhou, China
Abstract :
High quality single-layer and multilayer nanostructured Si1-xGex have been successfully grown on Si(100) substrates at low temperature by ultra-high vacuum chemical vapor deposition (UHV/CVD). The UHV/CVD system integrated three chambers into a whole and the growth chamber base pressure of 5.0 × 10-8 Pa can be available. The nanostructures of SiGe/Si were characterized using high-resolution X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM). The results show good crystal quality and sharp interfaces. This demonstrates further crystal quality improvements of nanostructured SiGe alloy may be available in the application of microelectronics and optoelectronics.
Keywords :
Ge-Si alloys; X-ray diffraction; chemical vapour deposition; multilayers; nanostructured materials; semiconductor devices; transmission electron microscopy; HRXRD; Si1-xGex; UHV/CVD; XTEM; cross-sectional transmission electron microscopy; crystal quality; high-resolution X-ray diffraction; microelectronics; multilayer nanostructured SiGe; optoelectronics; sharp interfaces; single-layer nanostructured SiGe; ultra-high vacuum chemical vapor deposition; Chemical vapor deposition; Epitaxial layers; Germanium silicon alloys; Nanoscale devices; Nanostructured materials; Semiconductor materials; Silicon germanium; Substrates; Temperature; Transmission electron microscopy;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435265
