Title :
Review on epitaxial crystal growth on compliant substrate
Author :
Huang, F.Y. ; Jiang, N. ; Zeng, Y.P.
Author_Institution :
Dept. of Radio Eng., Southeast Univ., Nanjing, China
Abstract :
We present a review on the growth and characterization of epitaxial semiconductor thin films, with a large lattice mismatch to Si, on nanometer thin silicon-on-insulator (SOI) compliant substrate. The first part is SiGe on SOI, and the second part is SiC on SOI. Some theoretical analysis for SiGe on SOI is also discussed.
Keywords :
Ge-Si alloys; carbon; epitaxial growth; nanoelectronics; semiconductor epitaxial layers; silicon-on-insulator; Ge-Si; SOI compliant substrate; Si-C; SiC; SiGe; epitaxial crystal growth; epitaxial semiconductor thin films; lattice mismatch; nanometer thin silicon-on-insulator; Annealing; Boron alloys; Germanium silicon alloys; Lattices; Semiconductor films; Silicon alloys; Silicon carbide; Silicon germanium; Substrates; Temperature;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435275
