DocumentCode
435856
Title
Review on epitaxial crystal growth on compliant substrate
Author
Huang, F.Y. ; Jiang, N. ; Zeng, Y.P.
Author_Institution
Dept. of Radio Eng., Southeast Univ., Nanjing, China
Volume
3
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
2178
Abstract
We present a review on the growth and characterization of epitaxial semiconductor thin films, with a large lattice mismatch to Si, on nanometer thin silicon-on-insulator (SOI) compliant substrate. The first part is SiGe on SOI, and the second part is SiC on SOI. Some theoretical analysis for SiGe on SOI is also discussed.
Keywords
Ge-Si alloys; carbon; epitaxial growth; nanoelectronics; semiconductor epitaxial layers; silicon-on-insulator; Ge-Si; SOI compliant substrate; Si-C; SiC; SiGe; epitaxial crystal growth; epitaxial semiconductor thin films; lattice mismatch; nanometer thin silicon-on-insulator; Annealing; Boron alloys; Germanium silicon alloys; Lattices; Semiconductor films; Silicon alloys; Silicon carbide; Silicon germanium; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435275
Filename
1435275
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