DocumentCode
435857
Title
Ge condensation characterization of SiGe-on-insulator structure fabricated by separation of oxygen implantation
Author
Chen, Z.J. ; Zhang, F. ; Zhang, Z.X. ; Bo, J. ; Wang, X. ; Zou, S.C.
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Volume
3
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
2187
Abstract
In this paper we present a virtual strained silicon substrate, full relaxed SiGe-on-insulator (SGOI)(Ge% = 15%) structure with stepwise buffer layers and high quality box layer, fabricated by separation by implantation of oxygen (SIMOX) technique. The Ge condensation effect of the top SiGe layer is found and its dependence on the SIMOX parameters is also reviewed. This result is a unique way to get high Ge content of SGOI/Si heterostructures.
Keywords
Ge-Si alloys; SIMOX; substrates; Ge condensation effect; Ge-Si; SGOI/Si heterostructures; SIMOX; SiGe-on-insulator; high quality box layer; separation by implantation of oxygen; stepwise buffer layers; virtual strained silicon substrate; Buffer layers; Chemical analysis; Germanium silicon alloys; Oxidation; Oxygen; Silicon germanium; Silicon on insulator technology; Spectroscopy; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435277
Filename
1435277
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