Performance of AlGaN/GaN heterostructure FETs over temperatures

Author

Lee, Chien-Chi ; Shih, Cheng-Feng ; Lee, Chien-Ping ; Tu, Ru-Chin ; Chuo, Chang-Cheng ; Chi, Jim

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2265

Abstract

The paper presents a comparison of the performance of undoped and modulation-doped AlGaN/GaN HFET devices over temperature. The results obtained indicate that the device structure has a significant influence on the device performance. The modulation-doped devices are superior to the undoped devices over the temperatures studied. The stability (the temperature dependence of device performance), however, is not as good as the undoped devices.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; semiconductor doping; semiconductor heterojunctions; thermal stability; AlGaN-GaN; aluminium gallium nitride/gallium nitride heterostructure FET; device performance; device structure; modulation-doped devices; stability; temperature dependence; undoped devices; Aluminum gallium nitride; Electron mobility; Epitaxial layers; FETs; Gallium nitride; HEMTs; MODFETs; Stability; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435296

Filename

1435296