Title :
Development of metamorphic InP/InGaAs double heterojunction bipolar transistors (HBTs) on GaAs substrate for microwave applications
Author :
Wang, Huifang ; Radhakrishnan, Krishnaja
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The device performance of InP/InGaAs double HBTs, including DC and microwave characteristics, have been carefully investigated. The MHBTs exhibit high current gain and common-emitter breakdown voltage with low junction leakages. An fT and an fmax higher than 90 GHz were obtained for the devices with 1.6×5 μm2 emitter area. Both microwave noise and power performances for the MHBTs are comparable to the conventional InP HBTs. More importantly, the issues which could be important for practical device application such as device thermal resistance, 1/f noise and device stability under high temperature and high current stress were carefully investigated. The results suggest a great potential of MHBTs for microwave applications.
Keywords :
1/f noise; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; millimetre wave bipolar transistors; semiconductor device breakdown; thermal resistance; thermal stability; 1.6 micron; 1/f noise; 5 micron; 90 GHz; InP-InGaAs-GaAs; MHBT; device thermal resistance; double heterojunction bipolar transistors; high common-emitter breakdown voltage; high current gain; high current stress stability; high temperature stability; low junction leakages; metamorphic HBT; microwave HBT; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Ice; Indium gallium arsenide; Indium phosphide; Microwave devices; Temperature; Thermal resistance; Thermal stresses;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435298
