Title :
The annealing effect of Schottky contact on AlGaN/GaN
Author :
Zhou, J. ; Hao, Y.L. ; Yang, Z.J. ; Zhang, G.Y. ; Wu, G.Y.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The AlGaN/GaN samples were grown on sapphire substrates by MOCVD. A Ti/Al/Ti/Au multi-layer film and Ni/Au bi-layer film were sputtered for ohmic contact and Schottky contact respectively. The optimal annealing temperature of the Schottky contact was determined as 450°C. The ideality factor and Schottky barrier height were calculated out from the I-V curves of the Schottky contact. One fitting formula for the leakage current of the Schottky contact was set up and its parameters dependence on the annealing temperature were discussed. The parameter A was linear with the negative SBH, and the parameter B was related to the GaN material intrinsic factors.
Keywords :
III-V semiconductors; MOCVD; Schottky barriers; aluminium; aluminium compounds; annealing; gallium compounds; gold; leakage currents; multilayers; nickel; ohmic contacts; titanium; wide band gap semiconductors; 450 degC; Al-Ti-Au; AlGaN-GaN; MOCVD; Ni-Au; Schottky barrier height; Schottky contact I-V curves; bi-layer film; ideality factor; leakage current; metallic multilayer film; ohmic contact; optimal annealing temperature; Aluminum gallium nitride; Annealing; Fitting; Gallium nitride; Gold; MOCVD; Ohmic contacts; Schottky barriers; Substrates; Temperature;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435300
