InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

Author

Lee, Kuan-Wei ; Lin, Yu-Ju ; Yang, Nan-Ying ; Lee, Yu-Chang ; Sze, Po-Wen ; Wang, Yeong-Her ; Houng, Mau-Phon

Author_Institution

Dept. of Electr. Eng., Cheng Kung Univ., Tainan, Taiwan

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2301

Abstract

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, it can be observed that the MOS-PHEMT has a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications.

Keywords

MOSFET; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; liquid phase deposition; semiconductor technology; InGaP-InGaAs-GaAs; MOS-PHEMT; breakdown voltage; gate dielectric; gate leakage current; gate swing voltage; high-power applications; indium gallium phosphide/indium gallium arsenide/gallium arsenide transistor; liquid phase oxidation; metal-oxide-semiconductor transistor; pseudomorphic high electron mobility transistor; Breakdown voltage; Dielectric liquids; Dielectric materials; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MODFETs; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435305

Filename

1435305