Effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon

Author

Cui, Can ; Yang, Deren ; Ma, Xiangyang ; Yu, Xuegong ; Que, Duanlin

Author_Institution

State Key Lab. of Silicon Mater., Zhejiang Univ., Hangzhou, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2395

Abstract

The effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon has been investigated at low temperature in this paper. It is found that oxygen precipitation has been enhanced in neutron-irradiated silicon by prolonged annealing at 750°C, which is based on denser precipitate nuclei. Furthermore, by Fourier transform infrared spectrometry (FTIR) the VO complexes can transfer into VO₂ and VO₃ complexes during low temperature annealing. Based on these facts, it is reasonably deduced that in neutron irradiated silicon the VO complexes can become the pre-nuclei of oxygen precipitates at low temperature, and therefore enhance oxygen precipitation.

Keywords

Fourier transform spectroscopy; annealing; elemental semiconductors; neutron effects; oxygen; precipitation (physical chemistry); silicon; 750 degC; FTIR; Fourier transform infrared spectrometry; O₂; Si; V-O complexes; low temperature annealing; neutron-irradiated silicon; oxygen precipitation pre-nuclei; precipitate nuclei density; prolonged annealing; Annealing; Fourier transforms; Infrared spectra; Neutrons; Optical microscopy; Oxygen; Petroleum; Silicon; Spectroscopy; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435329

Filename

1435329