Title :
Conductivity to first SBD of a stress induced leakage path in ultrathin thermal oxides
Author :
Xu, Mingzhen ; Tan, Changhua ; He, Yandong
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The properties of detect current at first SBD is studied under constant voltage stress (CVS). It is experimentally shown that the logarithm of the conductivity as well as time-to-breakdown follows a reciprocal temperature dependence and a single path conductivity and time-to-breakdown are also strongly correlated, and obey a simple reci-symmetrical law.
Keywords :
MOSFET; leakage currents; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOSFET; constant voltage stress; dielectric breakdown; reci-symmetrical law; reciprocal temperature dependence; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; single path conductivity; soft breakdown; stress induced leakage path; time-to-breakdown; ultrathin thermal oxides; Breakdown voltage; Electric breakdown; Helium; MOS devices; MOSFET circuits; Microelectronics; Partial response channels; Temperature dependence; Thermal conductivity; Thermal stresses;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436622
