Study on near-flatband-voltage SILC in ultra-thin plasma nitrided gate oxides

Author

He, Yandong ; Mingzhen Zu ; Tan, Changhua

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

804

Abstract

SILC has become more serious due to the aggressive scaling-down of the gate oxide thickness. In this paper, we investigate the near-flatband-voltage (NFB) SILC for both NMOS and PMOS with an EOT of 15A plasma nitrided gate oxide. The noticeable evolution of NFB SILC was observed. The generation kinetics of NFB SILC demonstrated the relationship with the density of stress-induced interface trap and the concentration of nitrogen incorporation near Si/SiO₂ interface. The NFB SILC behavior of RTNO (rapid thermal oxynitride) and plasma nitrided oxide was compared in this paper.

Keywords

MOSFET; interface states; ion implantation; leakage currents; nitrogen; semiconductor doping; silicon compounds; N; NMOS devices; PMOS devices; Si-SiO₂; near-flatband-voltage SILC; nitrogen incorporation; plasma nitrided oxide; rapid thermal oxynitride; stress induced leakage current; stress-induced interface trap; ultra-thin plasma nitrided gate oxides; CMOS process; Capacitance-voltage characteristics; Feedback amplifiers; High-K gate dielectrics; Nitrogen; Plasma devices; Plasma materials processing; Plasma properties; Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436627

Filename

1436627