DocumentCode
435878
Title
TDDB characteristics of ultra-thin HfN/HfO2 gate stack
Author
Yang, Hong ; Sa, Ning ; Tang, Liang ; Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi ; Yu, H.Y. ; Ren, C. ; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.L.
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
808
Abstract
In this paper, the area and electric field dependence of time dependent dielectric breakdown (TDDB) for the ultra thin HfN/HfO2 gate stack (EOT∼9nm) under negative constant voltage stress (CVS) was studied. Area-scaling consistent with Weibull statistics as in SiO2 was observed in the HfN/HfO2 gate stack, demonstrating that intrinsic effects dominate TDDB characteristics of the ultra thin HfN/HfO2 gate stack. A new model on the mechanism of electric-field dependent TDDB was proposed. In this model, the reliability of HfN/HfO2 gate stack is dominated by the breakdown of HfO2 bulk layer under high electric field stressing and by the breakdown of the interfacial layer (IL) under low electric field stressing, respectively.
Keywords
dielectric thin films; electric breakdown; hafnium compounds; interface phenomena; semiconductor device reliability; HfN-HfO2; TDDB characteristics; area scaling; electric field dependence; gate stack reliability; high electric field stressing; interfacial layer; low electric field stressing; negative constant voltage stress; time dependent dielectric breakdown; ultra-thin gate stack; Breakdown voltage; Capacitors; Design for quality; Electric breakdown; Gate leakage; Hafnium oxide; Manufacturing; Stress; Testing; Weibull distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436629
Filename
1436629
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