DocumentCode
435879
Title
Hot carrier issues in thin body double-gate MOSFET
Author
Li, Ming ; Yoon, Euo-Jung ; Oh, Chang-Woo ; Lee, Sung-Young ; Kim, Sung-Min ; Yeo, Kyeong-Hean ; Kim, Min-Sang ; Kim, Sang-Hwan ; Choi, Dong-Uk ; Choe, Jeong-Dong ; Kim, Dong-Won ; Park, Donggun ; Kim, Kinam
Author_Institution
Samsung Electron. Co. Ltd., South Korea
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
812
Abstract
In this paper, the hot carrier reliability of double gate (DG) MOSFETs is evaluated by simulations. The effect of floating body and volume inversion on hot carrier injection in DG is studied. It proves that thin body DG has good immunity to hot carrier injection into the gate electrodes. And for the application of DG in nonvolatile memory, an effective method is suggested to control the hot carrier injection in DG.
Keywords
MOSFET; charge injection; hot carriers; semiconductor device models; semiconductor device reliability; floating body; hot carrier injection; hot carrier reliability; semiconductor device models; semiconductor device reliability; thin body double-gate MOSFET; volume inversion; Ambient intelligence; Art; Electrodes; Hot carriers; Immune system; MOSFET circuits; Silicon; Tiles; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436631
Filename
1436631
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