Title :
RF reliability of MOSFETs subject to electrical stress
Author :
Yu, Chuanzhao ; Yuan, J.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
The impact of gate and drain voltage stress on the analog performance of MOSFETs at RF frequencies was studied systematically. 0.16-μm NMOSFETs have been evaluated experimental to examine the RF performance metrics such as cutoff frequency, linearity, noise figure, and 1/f noise. A methodology is presented to study the reliability in MOSFETs subject to stress. Both circuit simulation and measurement data are employed to prove the finding and methodology.
Keywords :
MOSFET; semiconductor device measurement; semiconductor device models; semiconductor device reliability; 0.16 micron; MOSFETs; NMOSFETs; RF frequencies; RF reliability; drain voltage stress; electrical stress; gate voltage stress; semiconductor device measurement; semiconductor device models; semiconductor device reliability; Circuit noise; Circuit simulation; Cutoff frequency; Linearity; MOSFETs; Measurement; Noise figure; Radio frequency; Stress; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436632
