Title :
An investigation of endurance characteristic using PDO method in FLOTOX EEPROM structures
Author :
Xie, Bing ; He, Yandong ; Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this paper, the endurance characteristics, in FLOTOX EEPROM structures, was mainly studied using proportional difference operator (PDO) method. At the same time, a method to predict the programming window closing time in FLOTOX EEPROM devices is presented.
Keywords :
EPROM; integrated circuit testing; FLOTOX EEPROM structures; endurance characteristic; programming window closing time; proportional difference operator method; Capacitance; Degradation; EPROM; Electrons; Equivalent circuits; Fabrication; Nonvolatile memory; Read-write memory; Threshold voltage; Tiles;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436637
