DocumentCode :
435897
Title :
Composition of nanometer-scaled self-assembled SiGe islands
Author :
Deng, Ning ; Zhang, Lei ; Chen, Peiyi
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume :
2
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
910
Abstract :
Quantitative relation between composition of self-assembled SiGe islands and critical size for shape evolution was established. The critical size, at which Ge islands change from pyramids to domes, increases with increasing of Si concentration in islands. Based on the critical size obtained from AFM characterization of SiGe islands, the composition of nanometer-scaled SiGe islands was calculated from the dependence of critical size of shape transition on the Si concentration.
Keywords :
Ge-Si alloys; atomic force microscopy; nanostructured materials; self-assembly; AFM characterization; Si concentration; SiGe; critical size; nanometer-scaled SiGe; shape evolution; Atomic force microscopy; Atomic measurements; Force measurement; Germanium silicon alloys; Microelectronics; Nanoscale devices; Self-assembly; Shape; Silicon germanium; Strain measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1436654
Filename :
1436654
Link To Document :
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