Title :
Composition of nanometer-scaled self-assembled SiGe islands
Author :
Deng, Ning ; Zhang, Lei ; Chen, Peiyi
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Quantitative relation between composition of self-assembled SiGe islands and critical size for shape evolution was established. The critical size, at which Ge islands change from pyramids to domes, increases with increasing of Si concentration in islands. Based on the critical size obtained from AFM characterization of SiGe islands, the composition of nanometer-scaled SiGe islands was calculated from the dependence of critical size of shape transition on the Si concentration.
Keywords :
Ge-Si alloys; atomic force microscopy; nanostructured materials; self-assembly; AFM characterization; Si concentration; SiGe; critical size; nanometer-scaled SiGe; shape evolution; Atomic force microscopy; Atomic measurements; Force measurement; Germanium silicon alloys; Microelectronics; Nanoscale devices; Self-assembly; Shape; Silicon germanium; Strain measurement;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436654