DocumentCode
435899
Title
Recent progress in MOS compact modeling
Author
Yu, Zhiping ; Tian, Lilin
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
916
Abstract
Two major trends in MOS compact modeling: surface-potential and charge-control approaches, are reviewed. The aggressive scaling of CMOS technology towards sub-90nm regime calls for incorporation of ballistic transport in MOS compact model. Progress in developing quantum mechanically corrected, ballistic MOS model is presented.
Keywords
CMOS integrated circuits; MIS devices; ballistic transport; semiconductor device models; surface potential; CMOS technology; MOS compact modeling; ballistic MOS model; ballistic transport; charge control; surface potential; Ballistic transport; Computational efficiency; Educational institutions; Equations; Iterative methods; MOSFETs; Production; Prototypes; Semiconductor device modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436656
Filename
1436656
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