Xsim: unified regional approach to compact modeling for next generation CMOS

This paper describes the approaches in the development of Xsim, a unified regional threshold-voltage-based model for deep-submicron MOSFETs. In comparison to popular surface-potential-based models, our approach has the advantages of correlation to technology data, minimum data and one-iteration extraction, single-piece charge models from accumulation to strong inversion with extendibilily to poly-depletion and strained-Si, as well as selectable accuracy with the same parameter set.