DocumentCode
435903
Title
Mobility model of polysilicon thin-film transistor (poly-Si TFT)
Author
Gupta, Navneet ; Tyagi, B.P.
Author_Institution
Dept. of Phys., Graphic Era Inst. of Technol.,, Dehradun, India
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
950
Abstract
We propose a simple mobility model which includes lattice, crystal imperfection and grain-boundary scattering mechanisms. An empirical expression were developed for each mechanism and related to experimentally measured quantities. We studied the effect of grain size over a wide temperature range to evaluate the effective carrier mobility due to different scattering mobility. The model was found to account correctly for the experimentally observed variation and yield a reasonable good agreement.
Keywords
carrier mobility; elemental semiconductors; grain boundaries; grain size; semiconductor device models; silicon; thin film transistors; Si; carrier mobility model; grain size; grain-boundary scattering; polysilicon thin-film transistor; Active matrix liquid crystal displays; Crystallization; Grain boundaries; Grain size; Liquid crystals; Physics; Scattering; Silicon; Temperature distribution; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436663
Filename
1436663
Link To Document