Title :
Mobility model of polysilicon thin-film transistor (poly-Si TFT)
Author :
Gupta, Navneet ; Tyagi, B.P.
Author_Institution :
Dept. of Phys., Graphic Era Inst. of Technol.,, Dehradun, India
Abstract :
We propose a simple mobility model which includes lattice, crystal imperfection and grain-boundary scattering mechanisms. An empirical expression were developed for each mechanism and related to experimentally measured quantities. We studied the effect of grain size over a wide temperature range to evaluate the effective carrier mobility due to different scattering mobility. The model was found to account correctly for the experimentally observed variation and yield a reasonable good agreement.
Keywords :
carrier mobility; elemental semiconductors; grain boundaries; grain size; semiconductor device models; silicon; thin film transistors; Si; carrier mobility model; grain size; grain-boundary scattering; polysilicon thin-film transistor; Active matrix liquid crystal displays; Crystallization; Grain boundaries; Grain size; Liquid crystals; Physics; Scattering; Silicon; Temperature distribution; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436663
