Title :
An analytical charge density model comprising 1D quantum mechanical (QM) effect for sub-100nm bulk silicon MOSFETs
Author :
Guangping, Zhu ; Dawei, Zhang ; Lilin, Tian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
An analytical charge density model considering 1D quantum mechanical (QM) effect perpendicular to the channel, which has substantial impact on the characteristics of sub-100nm bulk silicon MOSFETs is developed. The model yields excellent accuracy compared to numerical simulations in both sub-threshold region and strong inversion region, in a large range of channel doping and oxide thickness. Therefore, it is promising to develop a more accurate I-V and C-V model for nano-scale MOSFETs, especially in sub-threshold region.
Keywords :
MOSFET; semiconductor device models; semiconductor doping; 1D quantum mechanical effect; C-V model; I-V model; Si; bulk silicon MOSFET; channel doping; charge density model; nanoscale MOSFET; numerical simulation; oxide thickness; strong inversion region; sub-threshold region; Analytical models; Capacitance; Capacitance-voltage characteristics; Doping; MOSFETs; Microelectronics; Numerical simulation; Quantum mechanics; Semiconductor process modeling; Silicon;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436666
