Title :
Sub-100nm strained Si CMOS: device performance and circuit behavior
Author :
Yang, L. ; Watling, J.R. ; Asenov, A. ; Barken, J.R. ; Roy, S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Using comprehensive device simulations, performance enhancement of sub-100nm strained Si MOSFETs has been investigated. Circuit behavior of conventional Si, strained Si, conventional Si SOI and strained SOI ring oscillators has been assessed.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; elemental semiconductors; oscillators; silicon; silicon-on-insulator; Si; circuit behavior; conventional Si SOI ring oscillators; device simulation; strained SOI ring oscillators; strained Si CMOS; strained Si MOSFET; Acoustic scattering; Calibration; Capacitive sensors; Circuit simulation; Electromagnetic compatibility; MOSFETs; Medical simulation; Optical scattering; Particle scattering; Phonons;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436670
